IRLML9303TRPBF International Rectifier, IRLML9303TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML9303TRPBF
• Description: MOSFET P-CH 30V 2.3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML9303TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 165 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML9303TRPBF; IRLML9303TRPBFTR

4
1000
100
100
0.1
Fig 7. Typical Source-Drain Diode
10
10
1
Fig 5. Typical Capacitance vs.
0.3
1
Drain-to-Source Voltage
C rss
C oss
C iss
T J = 150°C
-V DS , Drain-to-Source Voltage (V)
-V SD , Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
0.7
f = 1 MHZ
10
0.9
T J = 25°C
V GS = 0V
1.1
100
1.3
14.0
12.0
10.0
0.01
100
8.0
6.0
4.0
2.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
0.01
0
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge vs.
I D = -2.3A
-V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
1
Q G , Total Gate Charge (nC)
0.1
V DS = -24V
V DS = -15V
V DS = -6.0V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
2
DC
1
10msec
1msec
3
100µsec
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10
4
100
5