IRLML5203TRPBF International Rectifier, IRLML5203TRPBF Datasheet
IRLML5203TRPBF
Specifications of IRLML5203TRPBF
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IRLML5203TRPBF Summary of contents
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... Low Gate Charge l Lead-Free l Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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RECOMMENDED FOOT PRINT 0.972 3X [.038] 0.95 [.0375] Micro3 (SOT-23/TO-236AB) Part Marking Information PART NUMBER PART NUMBER CODE REF ERENCE IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = ...
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TR FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ...