IRF5804TRPBF International Rectifier, IRF5804TRPBF Datasheet
IRF5804TRPBF
Specifications of IRF5804TRPBF
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IRF5804TRPBF Summary of contents
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... Description ® These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe ® ...
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Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ...
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VGS TOP -10V -7.0V -5.0V -4.5V -4.0V 10 -3.7V -3.5V BOTTOM -3.0V 1 -3.0V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10. ...
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0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss Crss 10 1 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) ...
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-2.5A 0.15 0.10 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...
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Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com -250µ 100 ...
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8 www.irf.com ...
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Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS I3443DV PART NUMBER WAFER LOT NUMBER CODE PART NUMBER CODE REFERENCE SI3443DV 3B = IRF5800 3C = IRF5850 3D ...