IRF9335TRPBF International Rectifier, IRF9335TRPBF Datasheet

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IRF9335TRPBF

Manufacturer Part Number
IRF9335TRPBF
Description
MOSFET P-CH 30V 5.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9335TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
59 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
386pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
110 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 5.4 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
4.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF9335TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9335TRPBF
Manufacturer:
DIODES
Quantity:
5 600
Part Number:
IRF9335TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF9335TRPBF
Quantity:
193
Company:
Part Number:
IRF9335TRPBF
Quantity:
183
Notes  through
www.irf.com
Features and Benefits
Applications
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
IRF9335PbF
IRF9335TRPbF
V
V
I
I
I
P
P
T
T
Absolute Maximum Ratings
D
D
DM
J
STG
DS
GS
D
D
@ T
@ T
@T
@T
(@V
(@V
(@T
A
A
A
A
R
R
Q
= 25°C
= 70°C
= 25°C
= 70°C
DS(on) max
DS(on) max
GS
g (typical)
GS
A
V
I
= 25°C)
DS
= -4.5V)
D
= -10V)
are on page 2
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
-5.4
110
-30
9.1
59
Package Type
SO8
SO8
f
f
mΩ
mΩ
nC
Parameter
V
A
GS
GS
@ -10V
@ -10V
Tape and Reel
Tube/Bulk
Form
G
S
S
S
Standard Pack
1
2
3
4
results in
8
7
6
5
Quantity
4000
-55 to + 150
D
D
D
D
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
HEXFET
95
IRF9335PbF
Max.
0.02
-5.4
-4.3
-30
±20
-43
2.5
1.6
®
Power MOSFET
SO-8
Note
Units
W/°C
06/17/10
°C
W
V
A
1

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IRF9335TRPBF Summary of contents

Page 1

... A Applications • • Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRF9335PbF IRF9335TRPbF Absolute Maximum Ratings V Drain-to-Source Voltage DS V Gate-to-Source Voltage GS Continuous Drain Current 25° Continuous Drain Current, V ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R DS(on) Static Drain-to-Source On-Resistance V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 -10V ≤60µs PULSE WIDTH 150° ...

Page 4

150° 25°C 1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 6 5.4 4.8 4.2 3.6 3 2.4 1.8 ...

Page 5

GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 450 400 350 300 250 200 150 100 ...

Page 6

DUT 20K S Fig 17a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0.01 Ω Fig 18a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 8

... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...

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