IRF6217TRPBF International Rectifier, IRF6217TRPBF Datasheet - Page 4

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IRF6217TRPBF

Manufacturer Part Number
IRF6217TRPBF
Description
MOSFET P-CH 150V 0.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6217TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
9nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
700mA
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.4 Ohm @ 420mA, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 0.7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
6 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
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IRF6217
10000
4
1000
0.1
10
100
1
10
0.2
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage

-V
T = 150
J
SD
-V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
0.6
Forward Voltage
°
C
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10

0.9
T = 25
J
Crss
Ciss
Coss
°
f = 1 MHZ
C
100

1.3
V
GS
= 0 V
SHORTED
1.6
1000
0.01
100
0.1
10
1
12
10
8
6
4
2
0
1
0
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse

I
D
Fig 6. Typical Gate Charge Vs.
=
-V DS , Drain-toSource Voltage (V)
-0.42A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
2
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10

V
V
V
DS
DS
DS
= -120V
= -75V
= -30V
4
100
www.irf.com
100µsec
10msec
6
1msec
1000
8

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