IRFL4310PBF International Rectifier, IRFL4310PBF Datasheet - Page 2

• Manufacturer Part Number: IRFL4310PBF
• Description: MOSFET N-CH 100V 1.6A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFL4310PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current, Drain: 1.6 A
• Gate Charge, Total: 17 nC
• Package Type: SOT-223
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 0.2 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 34 ns
• Time, Turn-on Delay: 7.8 ns
• Transconductance, Forward: 1.5 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2.2A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Gate Charge Qg: 17 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 18 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL4310PBF

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IRFL4310PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
‚
Notes:
I
I
I
V
t
Q
I
R
GSS
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
DSS
rr
d(on)
r
d(off)
f
SD
V
fs
rr
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
2
R
(BR)DSS
DD
G
= 25V, starting T
= 25Ω, I
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Fall Time
= 3.2A. (See Figure 12)
J
= 25°C, L = 9.2 mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
–––
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
SD
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
1.5
J
≤ 150°C
≤ 1.6A, di/dt ≤ 340A/µs, V
20
–––
–––
–––
210
0.12
––– 0.20
–––
–––
–––
–––
––– -100
330
–––
–––
72
2.1
7.8
7.8
17
18
34
92
54
–––
110
320
1.3
–––
250
100
–––
–––
–––
–––
–––
0.91
–––
–––
4.0
3.1
–––
25
12
13
25
V/°C
nC
ns
nC
µA
nA
pF
V
ns
A
Ω
V
V
S
R
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
= 31 Ω, See Fig. 10 „
= 25°C, I
= 25°C, I
= 1.6A
= 1.6A
= 6.2 Ω
≤ V
= 100V, V
= 0V, I
= V
= 50V, I
= 80V, V
= 80V
= 25V
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13 „
= 0V
= 50V
(BR)DSS
GS
, I
D
S
F
Conditions
D
D
D
= 250µA
Conditions
= 1.6A, V
= 1.6A
GS
= 250µA
= 0.80 A
GS
,
= 1.6A „
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V „