IRF7205PBF International Rectifier, IRF7205PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7205PBF
• Description: MOSFET P-CH 30V 4.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7205PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -4.6 A
• Gate Charge, Total: 27 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.07 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 97 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 6.6 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 4.6A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
10
0.0001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
0.001
SINGLE PULSE
0.01
t , Rectangular Pulse Duration (sec)
1
0.1
V
10%
90%
V
GS
DS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
≤ 0.1 %
≤ 1
t
r
J
DM
x Z
1
thJA
P
2
t
d(off)
10
DM
+ T
A
t
t
1
f
t
2
-
+
100