IRF9410TRPBF International Rectifier, IRF9410TRPBF Datasheet - Page 3
![MOSFET N-CH 30V 7A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF9410TRPBF
Manufacturer Part Number
IRF9410TRPBF
Description
MOSFET N-CH 30V 7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9410TRPBF.pdf
(7 pages)
Specifications of IRF9410TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Details
Other names
IRF9410PBFTR
IRF9410TRPBF
IRF9410TRPBFTR
IRF9410TRPBF
IRF9410TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9410TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
V
GS
3.5
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 25°C
J
3.0V
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
T = 150°C
4.5
DS
J
J
= 10V
5.0
5.5
10
A
A
100
10
100
0.1
1
10
1
0.1
0.4
TOP
BOTTOM 3.0V
T = 150°C
V
J
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
SD
, Drain-to-Source Voltage (V)
0.6
, Source-to-Drain Voltage (V)
1
0.8
T = 25°C
20µs PULSE WIDTH
T = 150°C
J
J
3.0V
1.0
V
GS
= 0V
3
10
1.2
A
A