IRF9410TRPBF International Rectifier, IRF9410TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9410TRPBF
• Description: MOSFET N-CH 30V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9410TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Details
• Other names: IRF9410PBFTR; IRF9410TRPBF; IRF9410TRPBFTR

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100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
V
GS
3.5
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 25°C
J
3.0V
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
T = 150°C
4.5
DS
J
J
= 10V
5.0
5.5
10
A
A
100
10
100
0.1
1
10
1
0.1
0.4
TOP
BOTTOM 3.0V
T = 150°C
V
J
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
SD
, Drain-to-Source Voltage (V)
0.6
, Source-to-Drain Voltage (V)
1
0.8
T = 25°C
20µs PULSE WIDTH
T = 150°C
J
J
3.0V
1.0
V
GS
= 0V
3
10
1.2
A
A