STD5N20T4 STMicroelectronics, STD5N20T4 Datasheet - Page 4
STD5N20T4
Manufacturer Part Number
STD5N20T4
Description
MOSFET N-CH 200V 5A DPAK
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet
1.STD5N20T4.pdf
(8 pages)
Specifications of STD5N20T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
45000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6563-2
STD5N20T4
STD5N20T4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD5N20T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD5N20T4
Manufacturer:
ST
Quantity:
20 000
STD5N20
Output Characteristics
Tranconductance
Gate Charge vs Gate-source Voltage
4/8
Tranfer Characteristics
Static Drain-Source On Resistance
Capacitance Variations