IRFR9120NTRPBF International Rectifier, IRFR9120NTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFR9120NTRPBF
• Description: MOSFET P-CH 100V 6.6A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR9120NTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 480 m Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 6.5 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns
• Gate Charge Qg: 18 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 47 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR9120NPBFTR

100
100
0.1
0.1
10
10
1
1
0.1
4
TOP
BOTTOM
-V
-V
DS
5
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
1
-4.5V
T = 25 C
7
J
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
°
10
8
= -50V
T = 150 C
J
°
9
°
100
10
100
0.1
10
1
2.5
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-6.7A
DS
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
T , Junction Temperature ( C)
, Drain-to-Source Voltage (V)
J
0
1
20
40
-4.5V
60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-10V
100