IRF7233TRPBF International Rectifier, IRF7233TRPBF Datasheet - Page 2
![MOSFET P-CH 12V 9.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7233TRPBF
Manufacturer Part Number
IRF7233TRPBF
Description
MOSFET P-CH 12V 9.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7233TRPBF.pdf
(7 pages)
Specifications of IRF7233TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 5V
Input Capacitance (ciss) @ Vds
6000pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
20 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 9.5 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
49 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7233PBFTR
IRF7233TRPBF
IRF7233TRPBFTR
IRF7233TRPBF
IRF7233TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7233TRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRF7233PbF
Source-Drain Ratings and Characteristics
Notes:
R
V
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
I
SM
DSS
d(on)
r
d(off)
f
S
rr
GSS
DS(on)
fs
(BR)DSS
(BR)DSS
GS(th)
2
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
R
Starting T
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.013 0.020
-0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2400 –––
––– 2220 –––
––– 0.001 –––
–––
––– 4530 6000
–––
–––
–––
-14
-12
3.3
G
= 25Ω, I
0.023 0.033
–––
–––
–––
–––
–––
––– -100
–––
540
–––
––– -100
370
–––
9.3
49
22
26
77
43
35
J
= 25°C, L = 1.3mH
AS
–––
–––
–––
–––
-1.0
100
–––
–––
–––
–––
-1.2
-10
= 9.5A.
-76
74
14
32
-2.5
65
52
V/°C
µA
nC
nA
pF
nC
ns
ns
V
V
Ω
V
S
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0kHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = 100A/µs
showing the
T
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -9.5A
= -9.5A
= 25°C, I
= 25°C, I
= 1.0Ω
= 6.2Ω
= 0V
= 0V, I
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -12V, V
= -9.6V, V
= -12V, V
= -12V
= 12V
= -10V
= -5.0V
= -10V
= -10V
GS
Conditions
, I
D
D
S
F
D
Conditions
D
= -5.0mA
= -250µA
= -2.5A
= -2.5A, V
D
D
GS
GS
= -250µA
GS
= -9.5A
= -9.5A
= -6.0A
= 0V
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S