STN3PF06 STMicroelectronics, STN3PF06 Datasheet - Page 4

• Manufacturer Part Number: STN3PF06
• Description: MOSFET P-CH 60V 2.5A SOT223
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STN3PF06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4116-2

Electrical characteristics
2
Note:
4/12
Electrical characteristics
(T
Table 4.
Table 5.
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
V
Symbol
Symbol
R
CASE
V
(BR)DSS
I
I
I
DS(on)
C
D(on)
GS(th)
C
C
Q
Q
DSS
GSS
Q
g
oss
rss
iss
fs
gs
gd
g
=25 °C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
On state drain current
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
I
V
V
I
V
(see Figure 14)
D
D
D
DS
DS
DS
GS
GS
DS
GS
GS
GS
DS
DS
= 1.25 A
= 250 µA, V
= 12 A, V
= Max rating
= Max rating, T
> I
=10 V
= ±20 V
= V
= 10 V, I
> I
= 25 V, f = 1 MHz,
= 0
= 10 V
Test conditions
D(on)
Test conditions
D(on)
GS
, I
DD
x R
D
x R
D
GS
= 250 µA
= 1.5 A
= 48 V,
DS(on)max,
DS(on)max,
= 0
C
=125 °C
Min.
Min.
2.5
60
2
Typ.
0.20
Typ.
850
230
1.5
75
16
4
6
Max. Unit
Max. Unit
±100
STN3PF06
0.22
21
10
1
4
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
A
V
Ω