IRLR3410TRLPBF International Rectifier, IRLR3410TRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRLR3410TRLPBF
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR3410TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 155 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 15 A
• Power Dissipation: 52 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22.7 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
‚
IRLR/U3410PbF

ƒ
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
L
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
S
rr
on
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
2
V
rr
Repetitive rating; pulse width limited by
(BR)DSS
R
I
max. junction temperature. ( See fig. 11 )
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
≤ 175°C
= 25Ω, I
≤ 9.0A, di/dt ≤ 540A/µs, V
= 25V, starting T
/∆T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) …
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 9.0A. (See Figure 12)
J
= 25°C, L = 3.1mH
Parameter
Parameter
DD
≤ V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
„
…
†
Pulse width ≤ 300µs; duty cycle ≤ 2%
Uses IRL530N data and test conditions
This is applied for I-PAK, L
center of die contact
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
7.7
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.122 –––
–––
––– 0.105
––– 0.125
––– 0.155
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
800
160
7.2
7.5
4.5
–––
–––
–––
140
740 1100
53
30
26
90
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
2.0
4.8
210
25
34
20
1.3
60
17
V/°C
µA
nA
nC
nH
pF
ns
W
nC
V
V
S
ns
A
V
S
of D-PAK is measured between lead and
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5…
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „…
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
= 9.0A
= 9.0A
= 25°C, I
= 25°C, I
= 6.0Ω, V
= 5.5Ω, See Fig. 10 „…
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V, See Fig. 6 and 13 „…
= 50V
= 0V
GS
, I
D
D
S
F
D
D
GS
= 250µA
D
D
Conditions
GS
Conditions
=9.0A
= 9.0A, V
= 250µA
= 9.0A…
= 10A „
GS
= 10A „
= 9.0A „
= 5.0V
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
= 150°C
G
= 0V „
G
S
+L
D
D
S
)
S
D