SI4435DYPBF International Rectifier, SI4435DYPBF Datasheet - Page 2
SI4435DYPBF
Manufacturer Part Number
SI4435DYPBF
Description
MOSFET P-CH 30V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of SI4435DYPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2320pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
-8 A
Gate Charge, Total
40 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.015 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 8 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
31 ns
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4435DYPBF
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Si4435DYPbF
Electrical Characteristics @ T
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
GSS
SD
2
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
–––
––– -0.019 –––
––– 0.015 0.020
––– 0.026 0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2320 –––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t ≤
–––
–––
–––
–––
––– -100
–––
130
390
270
–––
7.1
8.0
34
33
11
40
16
76
90
–––
–––
–––
200
–––
-1.2
–––
–––
100
110
140
–––
-10
-10
51
50
60
24
2.5
50
V/°C Reference to 25°C, I
nC
nC
pF
ns
V
V
S
V
Ω
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0kHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
V
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.6A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 15Ω
= V
= -15V, I
= -24V, V
= -15V, V
= -15V
= -15V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.5A, V
= -2.5A
D
GS
GS
= -250µA
GS
= -8.0A
= -8.0A
= -5.0A
= 0V
= 0V, T
= -10V
D
= -1mA
GS
J
= 70°C
G
= 0V
S
D