SI4435DYPBF International Rectifier, SI4435DYPBF Datasheet - Page 2

• Manufacturer Part Number: SI4435DYPBF
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DYPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 40 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.015 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 130 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics
Si4435DYPbF
Electrical Characteristics @ T

‚
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
GSS
SD
2
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
–––
––– -0.019 –––
––– 0.015 0.020
––– 0.026 0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2320 –––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t ≤
–––
–––
–––
–––
––– -100
–––
130
390
270
–––
7.1
8.0
34
33
11
40
16
76
90
–––
–––
-1.2
–––
–––
100
–––
–––
110
200
140
–––
-10
-10
51
50
60
24
2.5
50
V/°C
nC
nC
pF
ns
V
V
S
V
Ω
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0kHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs ‚
V
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.6A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 15Ω
= V
= -15V, I
= -24V, V
= -15V, V
= -15V
= -15V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V ‚
= -15V, V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.5A, V
= -2.5A
D
GS
GS
= -250µA
GS
= -8.0A
= -8.0A ‚
= -5.0A ‚
= 0V
= 0V, T
= -10V ‚
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V ‚
S
D