IRF7807TRPBF International Rectifier, IRF7807TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7807TRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807PBFTR; IRF7807TRPBF; IRF7807TRPBFTR

IRF7807/APbF
Electrical Characteristics
Source-Drain Rating & Characteristics
2
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage* V
Drain-Source Leakage
Current*
Gate-Source Leakage
Current*
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Q
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge„
Reverse Recovery
Charge (with Parallel
Schotkky)„
gs2
+ Q
gd
)
Notes:

‚
ƒ
„
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Devices are 100% tested to these parameters.
V
R
I
I
Q
Q
Q
Q
Q
Q
R
t
t
t
t
V
Q
Q
DSS
GSS
d
r
d
f
(on)
(BR)DSS
GS
SD
DS
g
g
gs1
gs2
gd
SW
oss
(off)
rr
rr(s)
(th)
(on)
oss
Min
Min Typ Max
1.0
30
IRF7807
0.76
3.66
Typ Max
2.1
2.9
1.2
17
12
14
12
17
25
80
50
–
6
±100
16.8
150
5.2
1.2
25
30
17
–
Min Typ Max Units
Min
1.0
30
IRF7807A
0.76
3.66
Typ Max Units
2.1
2.9
1.2
17
12
14
12
17
25
80
50
–
6
±100
16.8
150
1.2
30
25
17
–
mΩ
µA
nA
nC
nC
ns
Ω
V
V
V
I
di/dt = 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
S
V
V
V
V
V
Tj = 100°C
V
V
V
V
V
I
R
V
Resistive Load
DS
DS
D
= 7A‚, V
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
GS
g
= 7A
= 16V, V
= 16V, V
= 2Ω
= 4.5V, I
= V
= 24V, V
= 16V, I
= 16V, V
= 16V
= 0V, I
= 24V, V
= ±12V
= 5V, I
= 4.5V
Conditions
Conditions
GS
, I
D
D
GS
D
www.irf.com
GS
D
GS
= 7A
= 250µA
D
GS
GS
= 250µA
GS
= 7A
= 0V
= 7A‚
= 0V, I
= 0V, I
= 0,
= 0
= 0
S
S
= 7A
= 7A