STD2NK60Z-1 STMicroelectronics, STD2NK60Z-1 Datasheet - Page 5
![MOSFET N-CH 600V 1.4A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STD2NK60Z-1
Manufacturer Part Number
STD2NK60Z-1
Description
MOSFET N-CH 600V 1.4A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STD2NK60Z-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 Ohm @ 700mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
1.4A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
8ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Figure 9: Safe Operating Area For TO-220FP
Figure 10: Output Characteristics
Figure 11: Transconductance
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Figure 12: Thermal Impedance For TO-220FP
Figure 13: Transfer Characteristics
Figure 14: Gate Charge vs Gate-source Voltage
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