IRLR120NPBF International Rectifier, IRLR120NPBF Datasheet - Page 7

• Manufacturer Part Number: IRLR120NPBF
• Description: MOSFET N-CH 100V 10A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR120NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 185 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 265 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 22 ns
• Gate Charge Qg: 13.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Waveform
Waveform
Fig 14. For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
Diode Recovery
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
„
P.W.
+
IRLR/U120NPbF
V
V
I
SD
GS
DD
=10V
+
-
V
DD
7