IXTY3N50P IXYS, IXTY3N50P Datasheet
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Manufacturer Part Number
IXTY3N50P
Description
MOSFET N-CH 500V 3.6A DPAK
Specifications of IXTY3N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
5.5V @ 50µA
Gate Charge (qg) @ Vgs
9.3nC @ 10V
Input Capacitance (ciss) @ Vds
409pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Forward Transconductance Gfs (max / Min)
3.5 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
3.6
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
409
Qg, Typ, (nc)
9.3
Trr, Typ, (ns)
400
Pd, (w)
70
Rthjc, Max, (k/w)
1.8
Package Style
TO-252AA (D PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
© 2006 IXYS All rights reserved
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
TO-252
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 50µA
G
= 0.5 I
, V
= 20 Ω
DS
= 0
D25
(TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXTA 3N50P
IXTP 3N50P
IXTY 3N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
180
150
300
260
3.6
0.8
10
10
70
8
3
4
3
±100
Max.
5.5
2.0
50
5
V/ns
mJ
mJ
° C
nA
µA
µA
°C
°C
°C
°C
W
V
Ω
V
V
V
A
A
A
V
V
g
g
g
Features
l
l
l
Advantages
l
l
l
TO-220 (IXTP)
TO-263 (IXTA)
TO-252 (IXTY)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G = Gate
S = Source
DS(on)
DSS
G
D
G
G
S
S
= 500 V
= 3.6 A
≤ ≤ ≤ ≤ ≤ 2.0 Ω Ω Ω Ω Ω
S
D = Drain
TAB = Drain
DS99200E(12/05)
(TAB)
(TAB)
(TAB)
Related parts for IXTY3N50P
IXTY3N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 3N50P IXTP 3N50P IXTY 3N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 3 180 ≤ DSS 70 -55 ... +150 150 -55 ...
... L3 2.54 2.92 0.100 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. ...
... olts D S Fig Nor m aliz S(on) 0 alue 3 10V GS 2.8 2.4 2.0 1.6 1.2 0 mperes D © 2006 IXYS All rights reserved 2.50 2.25 2.00 1.75 6V 1.50 1.25 1.00 0. 3.5 3.0 º 125 C J 2.5 2 ...
... olts G S Fig. 9. Sou Sour ce -To-Dr ain V oltage º 125 0.5 0.55 0.6 0.65 0.7 0. olts S D Fig. 11. Capacitance 1000 100 1MH olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0.85 0 IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig ...
... Fig. 13. Maximum Transient Thermal Resistance 10.0 1.0 0.1 0.1 © 2006 IXYS All rights reserved ulse Width - m illiseconds IXTA 3N50P IXTP 3N50P IXTY 3N50P 100 1000 ...
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