IRFR3910PBF International Rectifier, IRFR3910PBF Datasheet - Page 11

• Manufacturer Part Number: IRFR3910PBF
• Description: MOSFET N-CH 100V 16A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3910PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 115 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 115 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 52 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns
• Gate Charge Qg: 29.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 27 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/