IRF7424TRPBF International Rectifier, IRF7424TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7424TRPBF
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7424TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4030pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 22 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 11 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 75 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7424PBFTR; IRF7424TRPBF; IRF7424TRPBFTR

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1000
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
0.1
2.5
TOP
BOTTOM
T = 150 C
J
-V
-V
DS
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
3.0
GS
°
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
1
3.5
°
-2.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
4.0
J
DS
10
= -15V
°
4.5
100
5.0
1000
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
-11A
-V
T , Junction Temperature ( C)
DS
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
IRF7424PbF
-2.5V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-10V
3
100