IRFR18N15DTRPBF International Rectifier, IRFR18N15DTRPBF Datasheet - Page 5
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IRFR18N15DTRPBF
Manufacturer Part Number
IRFR18N15DTRPBF
Description
MOSFET N-CH 150V 18A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15DTRRP.pdf
(11 pages)
Specifications of IRFR18N15DTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
18 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
28 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
0.01
0.1
20
16
12
10
0.00001
8
4
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1