IRLU014NPBF International Rectifier, IRLU014NPBF Datasheet - Page 6

• Manufacturer Part Number: IRLU014NPBF
• Description: MOSFET N-CH 55V 10A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU014NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 265pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU014NPBF

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
I AS
t p
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
60
50
40
30
20
10
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
V
GS
Starting T , Junction Temperature ( C)
Same Type as D.U.T.
50
Current Regulator
.2µF
Vs. Drain Current
J
50KΩ
3mA
75
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
125
TOP
BOTTOM
I
www.irf.com
D
+
150
-
V
DS
°
2.4A
5.0A
6.0A
I D
175