STS15N4LLF5 STMicroelectronics, STS15N4LLF5 Datasheet
STS15N4LLF5
Specifications of STS15N4LLF5
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STS15N4LLF5 Summary of contents
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... Table 1. Device summary Order code STS15N4LLF5 April 2010 N-channel 40 V, 0.00625 Ω SO-8 STripFET™ Power MOSFET max Figure 1. Marking Package 15C4L SO-8 Doc ID 17339 Rev 1 STS15N4LLF5 SO-8 Internal schematic diagram Packaging Tape and reel www.st.com 1/12 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 17339 Rev 1 STS15N4LLF5 ...
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... STS15N4LLF5 1 Electrical ratings Table 2. Absolute maximim ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT (3) E Single pulse avalanche energy AS 1. Guaranteed for test time < 15ms 2 ...
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... V, f=1 MHz 4 (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Parameter Test conditions 4.7 Ω (see Figure 16) Doc ID 17339 Rev 1 STS15N4LLF5 Min. Typ 250 µ 7.5 A 0.00625 0.0067 = 7.5 A 0.0076 0.0083 D Min. Typ. 1570 - 257 12 3.9 5 ...
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... STS15N4LLF5 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characterisics Figure 6. Normalized B VDSS 6/12 Figure 3. Figure 5. vs temperature Figure 7. Doc ID 17339 Rev 1 STS15N4LLF5 Thermal impedance Transfer characteristics Static drain-source on resistance ...
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... STS15N4LLF5 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations v Figure 11. Normalized on resistance vs temperature Doc ID 17339 Rev 1 Electrical characteristics 7/12 ...
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... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 17339 Rev 1 STS15N4LLF5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...
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... STS15N4LLF5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 17339 Rev 1 Package mechanical data ® 9/12 ...
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... Doc ID 17339 Rev 1 STS15N4LLF5 inch Min Typ Max 0.053 0.069 0.004 0.010 0.043 0.065 0.013 0.020 0.007 0.010 0.189 0.197 0.15 ...
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... STS15N4LLF5 5 Revision history Table 8. Revision history Date 07-Apr-2010 Revision 1 First release Doc ID 17339 Rev 1 Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 17339 Rev 1 STS15N4LLF5 ...