STD4NK50Z-1 STMicroelectronics, STD4NK50Z-1 Datasheet - Page 7

• Manufacturer Part Number: STD4NK50Z-1
• Description: MOSFET N-CH 500V 3A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK50Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 2.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
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