IRF6712STRPBF International Rectifier, IRF6712STRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF6712STRPBF
• Description: MOSFET N-CH 25V 17A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF6712STRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.4V @ 50µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 3.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.9V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 8.7 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 36 W
• Gate Charge Qg: 13 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0049Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -40C to 150C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: Direct-FET SQ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 16a. Unclamped Inductive Test Circuit
Fig 15a. Gate Charge Test Circuit
0
6
R G
GS
20V
V DS
Fig 17a. Switching Time Test Circuit
t p
20K
1K
I AS
≤ 0.1 %
≤ 1
D.U.T
0.01 Ω
L
S
DUT
15V
L
DRIVER
+
-
+
- V DD
VCC
A
V
90%
10%
V
DS
GS
Fig 15b. Gate Charge Waveform
Id
Fig 16b. Unclamped Inductive Waveforms
I
Vgs
AS
Fig 17b. Switching Time Waveforms
t
d(on)
t
r
Qgodr
t p
Qgd
t
d(off)
Qgs2
V
Vgs(th)
(BR)DSS
t
Vds
Qgs1
f
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