STD25NF10LT4 STMicroelectronics, STD25NF10LT4 Datasheet - Page 4
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STD25NF10LT4
Manufacturer Part Number
STD25NF10LT4
Description
MOSFET N-CH 100V 25A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet
1.STD25NF10LT4.pdf
(13 pages)
Specifications of STD25NF10LT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 5V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
25 A
Power Dissipation
100000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.035Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3156-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD25NF10LT4
Manufacturer:
ST
Quantity:
30 000
Company:
Part Number:
STD25NF10LT4
Manufacturer:
STMicroelectronics
Quantity:
1 890
Part Number:
STD25NF10LT4
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= Max rating
= Max rating,
= ± 16V
= V
= 10V, I
= 4.5V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 50V, I
= 80V, I
= 5V, R
Figure
Figure
GS
, I
G
13)
14)
D
D
GS
D
D
D
D
GS
= 4.7Ω
= 12.5A
= 12.5A
= 12.5A
= 25A,
= 250µA
= 12.5A
= 5V
=0
Min.
Min.
100
1
0.030
0.035
1710
Typ.
Typ.
250
110
8.5
24
20
40
58
20
38
21
0.035
0.040
Max.
STD25NF10L
Max.
±100
2.5
52
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω