STF2HNK60Z STMicroelectronics, STF2HNK60Z Datasheet - Page 4

• Manufacturer Part Number: STF2HNK60Z
• Description: MOSFET N-CH 600V 2A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STF2HNK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 20000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 4.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
V
C
Symbol
Symbol
R
V
CASE
(BR)DSS
oss eq
g
I
I
DS(on)
C
GS(th)
increases from 0 to 80% V
C
C
Q
Q
DSS
GSS
fs
Q
oss
oss eq
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
Gate Body Leakage Current
(V
Gate Threshold Voltage
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
GS
= 1mA, V
= V
= 10V, I
=0, V
=480V, I
= Max Rating,
= Max Rating,Tc=125°C
=15V, I
=25V, f=1 MHz, V
= ±20V
=10V
Test Condictions
Test Condictions
GS
DS
, I
D
D
GS
D
D
=0V to 480V
= 1.0A
= 1.0A
= 50µA
= 2.0A
= 0
GS
=0
Min.
Min.
600
3
Typ.
Typ.
2.25
3.75
280
1.5
4.4
38
30
11
7
6
oss
Max.
Max.
when V
±
15
4.5
4.8
50
10
1
DS
Unit
Unit
nC
nC
nC
µA
µA
pF
pF
pF
pF
nA
S
V
V