STD5NK60ZT4 STMicroelectronics, STD5NK60ZT4 Datasheet - Page 2

• Manufacturer Part Number: STD5NK60ZT4
• Description: MOSFET N-CH 600V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD5NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5890-2; STD5NK60ZT4

STP5NK60Z - STP5NK60ZFP- STD5NK60Z
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
Thermal Data
(#) When mounted on 1inch² FR-4, 2 Oz copper board.
Table 4: Avalanche Characteristics
Table 5: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
V
Rthj-case
Rthj-amb
Symbol
dv/dt (1)
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
≤5A, di/dt ≤200A/µs, V
TOT
I
I
T
T
AR
ISO
stg
DS
GS
AS
GSO
D
D
j
l
( )
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
DD
j
= 25 °C, I
≤ V
(BR)DSS
D
C
GS
, T
= I
Parameter
Parameter
= 25°C
GS
j
j
= 20 kΩ)
≤ T
max)
AR
= 0)
, V
JMAX.
Igs=± 1mA (Open Drain)
DD
C
C
= 25°C
= 100°C
= 50 V)
Test Conditions
TO-220/DPAK
TO-220/DPAK
Min.
30
3.16
0.72
1.39
20
90
5
-
-55 to 150
Max Value
Value
3000
± 30
62.5
600
600
300
Typ.
4.5
220
5
TO-220FP
TO-220FP
3.16 (*)
20 (*)
2500
5 (*)
0.2
25
5
Max.
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
W
mJ
V
V
V
A
A
A
V
V
A
V