STP5NK65ZFP STMicroelectronics, STP5NK65ZFP Datasheet - Page 4

• Manufacturer Part Number: STP5NK65ZFP
• Description: MOSFET N-CH 650V 5A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK65ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Table 8.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
V
BV
SDM
I
SD
RRM
I
Q
SD
t
GSO
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward On voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source Drain Diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 15565 Rev 1
I
I
di/dt = 100 A/µs
V
Figure 20
Igs=± 1mA (open drain)
SD
SD
DD
= 4.5 A, V
= 4.5 A,
= 100 V, T
Test conditions
Test conditions
GS
j
= 150 °C
= 0
Min.
Min.
30
-
-
-
Typ.
Typ.
1.76
375
10
-
-
-
STP5NK65ZFP
Max.
Max.
4.5
1.6
18
-
-
Unit
Unit
nC
ns
V
A
A
V
A