STP7NK30Z STMicroelectronics, STP7NK30Z Datasheet - Page 3

• Manufacturer Part Number: STP7NK30Z
• Description: MOSFET N-CH 300V 5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP7NK30Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
oss eq.
t
t
t
I
I
C
SD
I
DS(on)
C
r(Voff)
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
DSS
GSS
I
Q
Q
SD
t
t
oss
t
t
t
iss
rss
rr
c
gs
gd
r
f
f
(1)
g
rr
(1)
(2)
(3)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance V
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
R
(see Figure 18)
V
R
(see Figure 17)
V
V
(see Figure 21)
I
I
V
(see Figure 19)
V
D
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
DD
GS
DD
G
G
DS
=1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 5 A, V
= 5 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
=15 V
= 0V, V
= 425 V, I
= 320V, I
= 320V, I
= 10V
= 40, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
GS
,
, I
I
V
GS
j
GS
DS
D
V
D
D
= 150°C
GS
D
D
GS
= 2.5 A
D
= 2.5 A
= 50µA
= 0
= 0
= 0V to 400V
= 5A,
= 5 A,
= 2.8 A,
= 10V
= 10 V
C
= 125 °C
GS
= 0
oss
STP7NK30Z - STF7NK30Z
Min.
Min.
Min.
300
when V
3
DS
increases from 0 to 80% V
Typ.
Typ.
Typ.
3.75
0.80
380
154
716
2.5
8.5
8.5
4.5
7.6
9.3
74
15
30
11
25
20
10
20
13
Max.
Max.
Max.
0.90
±10
1.6
4.5
17
20
50
5
1
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
nC
3/12
µA
µA
µA
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
A
V
A
DSS
.