IRF7707TRPBF International Rectifier, IRF7707TRPBF Datasheet - Page 4
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IRF7707TRPBF
Manufacturer Part Number
IRF7707TRPBF
Description
MOSFET P-CH 20V 7A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7707TRPBF.pdf
(8 pages)
Specifications of IRF7707TRPBF
Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
1.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
47nC @ 4.5V
Vgs(th) (max) @ Id
1.2V @ 250µA
Current - Continuous Drain (id) @ 25° C
7A
Drain To Source Voltage (vdss)
20V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 7A, 4.5V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
14.3 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 7 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
31 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7707TRPBF
Manufacturer:
IR
Quantity:
5 056
IRF7707
4
3500
2800
2100
1400
100
0.1
700
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.2
1
Drain-to-Source Voltage
T = 150 C
0.4
J
-V
C
C
C
-V
SD
iss
oss
rss
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
0.6
, Drain-to-Source Voltage (V)
°
GS
iss
rss
oss
=
=
=
=
0.8
0V,
C
C
C
gs
gd
ds
T = 25 C
J
+ C
+ C
10
1.0
f = 1MHz
gd ,
gd
°
C
1.2
ds
V
GS
SHORTED
1.4
= 0 V
1.6
100
100
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-7.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
DS
=-16V
www.irf.com
40
10
100us
1ms
10ms
50
100
60