STD30NF03LT4 STMicroelectronics, STD30NF03LT4 Datasheet

MOSFET N-CH 30V 30A DPAK

STD30NF03LT4

Manufacturer Part Number
STD30NF03LT4
Description
MOSFET N-CH 30V 30A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD30NF03LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
2.5V
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.02 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
240 ns
Minimum Operating Temperature
- 65 C
Rise Time
205 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3157-2

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Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
STD30NF03L-1
STD30NF03L
Low threshold drive
Switching application
Type
STD30NF03LT4
STD30NF03L-1
Part number
V
30V
30V
DSS
< 0.025Ω
< 0.025Ω
R
DS(on)
D30NF03L
D30NF03L
N-channel 30V - 0.020Ω - 30A - DPAK/IPAK
Marking
30A
30A
I
D
Rev 6
Internal schematic diagram
STripFET™ II Power MOSFET
Package
DPAK
IPAK
DPAK
1
STD30NF03L-1
3
STD30NF03L
Tape & reel
Packaging
IPAK
Tube
www.st.com
1
2
1/14
3
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Related parts for STD30NF03LT4

STD30NF03LT4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STD30NF03L-1 STD30NF03LT4 February 2007 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET™ II Power MOSFET R I DS(on) D < 0.025Ω 30A < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD30NF03L - STD30NF03L-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous) at ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD30NF03L - STD30NF03L-1 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/14 STD30NF03L - STD30NF03L-1 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

STD30NF03L - STD30NF03L-1 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/14 ...

Page 8

Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 STD30NF03L - STD30NF03L-1 Figure 13. Gate charge test ...

Page 9

STD30NF03L - STD30NF03L-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 10

Package mechanical data DIM (L1 10/14 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

Page 11

STD30NF03L - STD30NF03L-1 DIM TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 0.85 ...

Page 12

Packing mechanical data 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

Page 13

STD30NF03L - STD30NF03L-1 6 Revision history Table 6. Revision history Date 21-Jun-2004 03-Jul-2006 20-Feb-2007 Revision 4 Preliminary version 5 New template, no content change 6 Typo mistake on page 1 Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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