IRFH5207TRPBF International Rectifier, IRFH5207TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5207TRPBF
• Description: MOSFET N-CH 75V 13A 8-PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5207TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2474pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 71 A
• Power Dissipation: 105 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
1.0
10
75
60
45
30
15
Fig 9. Maximum Drain Current Vs.
0
0.001
0.01
0.2
25
0.1
10
Case (Bottom) Temperature
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
T J = 150°C
50
T C , Case Temperature (°C)
D = 0.50
0.6
0.10
0.20
0.05
0.02
0.01
75
0.8
T J = 25°C
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
1.0
100
1.2
V GS = 0V
125
1.4
t 1 , Rectangular Pulse Duration (sec)
150
1.6
0.0001
0.001
1000
Fig 10. Threshold Voltage Vs. Temperature
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0.10
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 1.0mA
ID = 150µA
ID = 100µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J , Temperature ( °C )
0.01
0
1
25
50
10msec
75 100 125 150
10
100µsec
1msec
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0.1
100