STD90N02L-1 STMicroelectronics, STD90N02L-1 Datasheet - Page 9

• Manufacturer Part Number: STD90N02L-1
• Description: MOSFET N-CH 25V 60A IPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N02L-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 2050pF @ 16V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD90N02L - STD90N02L-1
3
Buck converter
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (SW2) device requires:
Very low R
Small Q
Small C
Small Q
The C
avoid the cross conduction phenomenon.
The high side (SW1) device requires:
Small R
gate
Small Q
Low R
Figure 15. Synchronous buck converter
gd
DS(on)
OSS
G
GLS
rr
G
/C
to reduce losses on SW1 during its turn-on
and L
to have a faster commutation and to reduce gate charge losses
gs
DS(on)
to reduce the gate charge losses
to reduce losses due to output capacitance
to reduce the conduction losses
ratio lower than Vth/Vgg ratio especially with low drain to source voltage to
G
to reduce conduction losses
to allow higher gate current peak and to limit the voltage feedback on the
Buck converter
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