STD40NF10 STMicroelectronics, STD40NF10 Datasheet - Page 9
STD40NF10
Manufacturer Part Number
STD40NF10
Description
MOSFET N-CH 100V 50A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of STD40NF10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
2180pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7969-2
STD40NF10
STD40NF10
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD40NF10
Manufacturer:
STMicroelectronics
Quantity:
1 934
STP40NF10 - STD40NF10
3
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 17. Gate charge test circuit
Figure 19. Unclamped Inductive load test
Figure 21. Switching time waveform
circuit
Test circuit
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