STD40NF10 STMicroelectronics, STD40NF10 Datasheet - Page 3

MOSFET N-CH 100V 50A DPAK

STD40NF10

Manufacturer Part Number
STD40NF10
Description
MOSFET N-CH 100V 50A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STD40NF10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
2180pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7969-2
STD40NF10

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STD40NF10
1
Electrical ratings
Table 2.
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. I
4. Starting T
Table 3.
Symbol
R
Symbol
dv/dt
E
R
I
thj-case
DM
P
I
V
V
AS
T
SD
thj-a
D
TOT
I
T
DS
GS
stg
D
(1)
j
(2)
(4)
(3)
≤ 50 A, di/dt ≤ 600 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
j
Drain-source voltage (v
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
= 25 °C, I
Absolute maximum ratings
Thermal data
D
= 50 A, V
DD
DD
C
= 25 V
Doc ID 18254 Rev 1
Parameter
Parameter
≤ V
= 25 °C
gs
(BR)DSS
= 0)
C
C
, T
= 25 °C
= 100 °C
j
≤ T
JMAX.
- 55 to 175
Value
Value
0.83
62.5
100
±20
200
125
385
1.2
50
35
27
Electrical ratings
W/°C
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
W
V
V
A
A
A
3/13

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