IRF7822TRPBF International Rectifier, IRF7822TRPBF Datasheet - Page 3

MOSFET N-CH 30V 18A 8-SOIC

IRF7822TRPBF

Manufacturer Part Number
IRF7822TRPBF
Description
MOSFET N-CH 30V 18A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7822TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Input Capacitance (ciss) @ Vds
5500pF @ 16V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
18 A
Gate Charge, Total
44 nC (Control FET), 38 nC (Synchronous FET)
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
3.1 W
Resistance, Drain To Source On
5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
22 ns
Time, Turn-on Delay
15 ns
Voltage, Breakdown, Drain To Source
30 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±12 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
18 A
Mounting Style
SMD/SMT
Gate Charge Qg
44 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7822PBFTR
IRF7822TRPBF
IRF7822TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7822TRPBF
Manufacturer:
MICROCHIP
Quantity:
7 200
Part Number:
IRF7822TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
Fig 3. On-Resistance Vs. Gate Voltage
2.0
1.5
1.0
0.5
0.0
Fig 1. Normalized On-Resistance
-60 -40 -20
3.0
I =
D
15A
V GS, Gate -to -Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
4.0
0
20 40
I D = 15A
5.0
60
80 100 120 140 160
V
°
6.0
GS
=
4.5V
7.0
100000
10000
1000
100
6
5
4
2
1
0
1
0
Fig 2. Typical Gate Charge Vs.
I
D
Fig 4. Typical Capacitance Vs.
=
15A
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
10
Q , Total Gate Charge (nC)
G
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
IRF7822PbF
20
Coss
Ciss
Crss
10
V
DS
f = 1 MHZ
30
= 24V
40
SHORTED
3
100
50

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