STU3N62K3 STMicroelectronics, STU3N62K3 Datasheet - Page 17

• Manufacturer Part Number: STU3N62K3
• Description: MOSFET N-CH 620V 2.7A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STU3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 15.6 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 6.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
5
Package mechanical data
DIM.
A0
B0
B1
D1
K0
P0
P1
P2
W
D
E
R
F
TAPE MECHANICAL DATA
All dimensions are in millimeters
MIN.
10.4
1.65
2.55
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
DPAK FOOTPRINT
mm
MAX.
10.6
12.1
1.85
2.75
16.3
1.6
7.6
4.1
8.1
2.1
7
0.267 0.275
0.409 0.417
0.059 0.063
0.059
0.065 0.073
0.291 0.299
0.100 0.108
0.153 0.161
0.311 0.319
0.075 0.082
1.574
0.618
MIN.
inch
TAPE AND REEL SHIPMENT
Doc ID 14894 Rev 2
MAX.
0.476
0.641
DIM.
A
B
C
D
G
N
T
BASE QTY
REEL MECHANICAL DATA
2500
MIN.
12.8
20.2
16.4
1.5
50
Package mechanical data
mm
MAX.
13.2
18.4
22.4
330
BULK QTY
0.059
0.504 0.520
0.795
0.645 0.724
1.968
MIN.
2500
inch
12.992
MAX.
0.881
17/20