IXTY5N50P IXYS, IXTY5N50P Datasheet - Page 4

• Manufacturer Part Number: IXTY5N50P
• Description: MOSFET N-CH 500V 4.8A TO-252AA
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTY5N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 5.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 5.0
• Rds(on), Max, Tj=25°c, (?): 1.4
• Ciss, Typ, (pf): 620
• Qg, Typ, (nc): 12.6
• Trr, Typ, (ns): 400
• Pd, (w): 89
• Rthjc, Max, (k/w): 1.4
• Package Style: TO-252AA (D PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
10
15
12
1
9
6
3
0
7
6
5
4
3
2
1
0
0.4
0
4
f = 1MHz
5
0.5
4.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
T
J
= 125
0.6
-40
5
T
25
15
V
V
J
V
º
º
G S
= 125
º
S D
D S
C
C
C
- Volts
- Volts
5.5
0.7
20
- Volts
º
C
25
0.8
C iss
C rss
6
C oss
30
T
J
6.5
0.9
= 25
35
º
C
40
7
1
100
0.1
10
10
1
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
IXTA 5N50P IXTP 5N50P
R
DS(on)
T
V
I
I
J
D
G
DS
= -40
= 2.5A
= 10mA
Fig. 8. Transconductance
125
2
1
25
= 250V
Limit
º
º
Fig. 10. Gate Charge
º
Fig. 12. Forw ard-Bias
C
C
Safe Operating Area
C
2
4
Q
G
I
D
- nanoCoulombs
V
- Amperes
D S
DC
3
6
100
- Volts
4
8
IXTY 5N50P
10
T
T
5
J
C
= 1 50
= 25
12
º
º
6
C
C
1 00µs
1 ms
25µs
1 0ms
1000
14
7