IRFR6215PBF International Rectifier, IRFR6215PBF Datasheet

MOSFET P-CH 150V 13A DPAK

IRFR6215PBF

Manufacturer Part Number
IRFR6215PBF
Description
MOSFET P-CH 150V 13A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFR6215PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
295 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Current, Drain
-13 A
Gate Charge, Total
66 nC
Package Type
D-Pak (TO-252AA)
Polarization
P-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
0.295 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
53 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
3.6 S
Voltage, Breakdown, Drain To Source
-150 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.295Ohm
Drain-source On-volt
150V
Gate-source Voltage (max)
±20V
Drain Current (max)
13A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
580 m Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
37 ns
Gate Charge Qg
44 nC
Minimum Operating Temperature
- 55 C
Rise Time
36 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR6215PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR6215PBF
Manufacturer:
IR
Quantity:
20 000
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Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
θJA
@ T
@ T
P-Channel
175°C Operating Temperature
Surface Mount (IRFR6215)
Straight Lead (IRFU6215)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
TO-252AA
HEXFET
D-PAK
-55 to + 175
S
D
Max.
0.71
-9.0
-6.6
110
± 20
310
-13
-44
5.0
11
TO-251AA
®
R
I-PAK
IRFR6215PbF
IRFU6215PbF
DS(on)
Power MOSFET
V
Max.
DSS
110
1.4
50
I
D
PD-95080A
= -13A
= -150V
= 0.295Ω
Units
Units
12/14/04
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

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IRFR6215PBF Summary of contents

Page 1

... G S D-PAK TO-252AA Max. @ 10V GS @ 10V -9.0 GS 0.71 -6.6 - 175 300 (1.6mm from case ) Typ. ––– ––– ––– PD-95080A IRFR6215PbF IRFU6215PbF ® Power MOSFET V = -150V DSS R = 0.295Ω DS(on -13A D I-PAK TO-251AA Units -13 A -44 110 W W/° ...

Page 2

IRFR/U6215PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 20µs PULSE WIDTH -4. 25° Drain-to-Source Voltage (V) DS Fig 1. ...

Page 4

IRFR/U6215PbF 2000 1MHz iss rss oss ds gd 1600 C iss 1200 C oss 800 C ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRFR/U6215PbF D.U DRIVER -20V 0.01 Ω Charge 6 800 V DD 600 A 400 15V 200 0 25 Starting ...

Page 7

D.U.T + ‚ -  Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level ...

Page 8

IRFR/U6215PbF EXAMPLE: T HIS IS AN IRFR120 WIT EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 EMBLY LINE "A" Note: "P" in assembly line pos ition indicates "Lead-F ree" ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" OR INT ...

Page 10

IRFR/U6215PbF 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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