STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet

MOSFET N-CH 60V 38A D2PAK

STB45NF06T4

Manufacturer Part Number
STB45NF06T4
Description
MOSFET N-CH 60V 38A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STB45NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
980pF @ 25V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Continuous Drain Current Id
19A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
235mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10314-2
STB45NF06T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB45NF06T4
Manufacturer:
STMicroelectronics
Quantity:
2 400
Part Number:
STB45NF06T4
Manufacturer:
ST
0
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ORDER CODES
May 2004
STB45NF06
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
STANDARD THRESHOLD DRIVE
HIGH-EFFICIENCY DC-DC CONVERTERS
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
PART NUMBER
TYPE
STB45NF06T4
DS
(on) = 0.022
V
60V
DSS
<0.028
R
DS(on)
MARKING
B45NF06
N-CHANNEL 60V - 0.022 - 38A D
38A
I
D
PACKAGE
D²PAK
INTERNAL SCHEMATIC DIAGRAM
STripFET™ II MOSFET
D
2
STB45NF06
PAK
1
TAPE & REEL
PACKAGING
3
2
PAK
1/9

Related parts for STB45NF06T4

STB45NF06T4 Summary of contents

Page 1

... APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS ORDER CODES PART NUMBER STB45NF06T4 May 2004 N-CHANNEL 60V - 0.022 - 38A D I DS(on) D 38A MARKING PACKAGE B45NF06 D² ...

Page 2

STB45NF06 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol Parameter g (1) Forward Transconductance fs C Input Capacitance iss C Output Capacitance oss Reverse Transfer C rss Capacitance SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate ...

Page 4

STB45NF06 Safe Operating Area Output Characteristics Transconductance 4/9 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...

Page 5

Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STB45NF06 5/9 ...

Page 6

STB45NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

D mm. DIM. MIN. TYP A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 8 1.27 L3 1.4 M 2.4 R 0.4 V2 ...

Page 8

STB45NF06 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 ...

Page 9

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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