STP7NK40ZFP STMicroelectronics, STP7NK40ZFP Datasheet - Page 3

• Manufacturer Part Number: STP7NK40ZFP
• Description: MOSFET N-CH 400V 5.4A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP7NK40ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.4A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.4 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
t
I
I
C
SD
DS(on)
C
r(Voff)
GS(th)
C
d(on)
Q
Q
fs
d(off)
RRM
GSS
I
2. Pulse width limited by safe operating area.
3. C
DSS
Q
Q
SD
t
t
oss
t
t
t
rss
iss
rr
gs
gd
c
r
f
f
(1)
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
STP7NK40Z - STP7NK40ZFP - STD7NK40Z - STD7NK40Z-1
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(Resistive Load see, Figure 3)
V
R
(Inductive Load see, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
G
DD
DD
G
G
DS
=1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 4.7
= 4.7
= 5.4 A, V
= 5.4 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
=15 V
= ± 20V
= 10V, I
= 0V, V
= 200 V, I
= 320V, I
= 10V
= 50V, T
= 200 V, I
= 320V, I
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
,
, I
V
V
I
V
GS
DS
D
D
D
GS
GS
j
GS
D
D
GS
= 2.7 A
= 2.7 A
D
= 150°C
D
= 50µA
= 0
= 0V to 400V
= 5.4 A,
= 5.4A,
= 10 V
= 10 V
= 2.7 A
= 2.7A
= 10V
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
Min.
400
3
oss
when V
Typ.
3.75
0.85
Typ.
Typ.
Typ.
Typ.
535
220
990
3.5
82
18
53
15
15
19
10
30
12
12
10
20
4
9
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
Max.
21.6
±10
4.5
5.4
1.6
50
26
1
1
Unit
Unit
Unit
Unit
Unit
nC
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
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