IXTP7N60PM IXYS, IXTP7N60PM Datasheet

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IXTP7N60PM

Manufacturer Part Number
IXTP7N60PM
Description
MOSFET N-CH 600V 4A TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXTP7N60PM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 3.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5.5V @ 100µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
4.0
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
1180
Qg, Typ, (nc)
20
Trr, Typ, (ns)
500
Pd, (w)
41
Rthjc, Max, (k/w)
3.0
Package Style
OVERMOLDED TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
V
Power MOSFET
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 25°C to 150°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
D
DD
D
D
= 250μA
= 100μA
= 3.5A, Note 1
≤ V
DS
= 0V
DSS
, T
J
GS
=150°C
= 1 MΩ
T
J
Preliminary Technical Information
= 125°C
JM
IXTA7N60PM
IXTP7N60PM
Characteristic Values
600
- 55 ... +150
Maximum Ratings
- 55 ... +150
3.0
Min.
1.13/10
± 30
± 40
150
300
260
Typ.
600
600
400
2.5
14
10
41
4
7
±100 nA
Nm/lb.in.
Max.
5.5
1.1
50 μA
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
Ω
V
V
V
V
A
A
A
g
V
I
R
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G = Gate
S = Source
Features
Advantages
Applications
D25
Plastic overmolded tab for electrical
isolation
International standard package
Avanlanche rated
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
Easy to mount
Space savings
G
DS(on)
DSS
D
S
= 4A
= 600V
≤ ≤ ≤ ≤ ≤
D = Drain
1.1Ω Ω Ω Ω Ω
Isolated Tab
DS99950(06/08)

Related parts for IXTP7N60PM

IXTP7N60PM Summary of contents

Page 1

... GSS DSS DS DSS 10V 3.5A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA7N60PM IXTP7N60PM Maximum Ratings 600 = 1 MΩ 600 GS ± 30 ± 400 =150° ... +150 150 - 55 ... +150 300 260 1.13/10 2.5 Characteristic Values Min. ...

Page 2

... DSS D 7 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. JM 500 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA7N60PM IXTP7N60PM ISOLATED TO-220 (IXTP...M) Max 3.0 °C/W Terminals Gate 2 - Drain (Collector Source (Emitter) Max 1.5 ...

Page 3

... 2.2 2.0 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Curre Case Te mpe rature 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Degrees Centigrade C IXTA7N60PM IXTP7N60PM Value D25 100 125 150 100 125 150 ...

Page 4

... C J 0.8 0 iss C oss C rss Volts Fig. 8. Transconductance º º º 125 Amperes D Fig. 10. Gate Charge 300V 3. 0mA nanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 10.00 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS REF: T_7N60P(37)06-17-08-D IXTA7N60PM IXTP7N60PM 100 ...

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