IRL530NSPBF International Rectifier, IRL530NSPBF Datasheet - Page 2

• Manufacturer Part Number: IRL530NSPBF
• Description: MOSFET N-CH 100V 17A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL530NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 150 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Gate Charge Qg: 22.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 53 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL530NSPBF

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