IRF540ZSTRRPBF International Rectifier, IRF540ZSTRRPBF Datasheet

MOSFET N-CH 100V 36A D2PAK

IRF540ZSTRRPBF

Manufacturer Part Number
IRF540ZSTRRPBF
Description
MOSFET N-CH 100V 36A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF540ZSTRRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
36A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
26.5mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
26.5 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Power Dissipation
92 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
39 ns
Gate Charge Qg
42 nC
Minimum Operating Temperature
- 55 C
Rise Time
51 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540ZSTRRPBF
Manufacturer:
IR
Quantity:
20 000
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
Features
Description
I
I
I
P
V
E
E
I
E
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
CS
JA
JA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Ã
Parameter
Parameter
i
GS
GS
g
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
IRF540ZPbF
h
TO-220AB
G
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
IRF540ZSPbF
D
S
-55 to + 175
D
y
Max.
in (1.1N
2
0.61
± 20
140
120
36
25
92
83
Pak
®
R
IRF540ZSPbF
IRF540ZLPbF
DS(on)
Power MOSFET
V
IRF540ZPbF
y
m)
DSS
Max.
1.64
I
–––
62
40
D
= 36A
IRF540ZLPbF
PD - 95531A
= 26.5m
= 100V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF540ZSTRRPBF Summary of contents

Page 1

Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description ® This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2500 C oss = 2000 Ciss 1500 1000 500 ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse 90 BOTTOM 10% Duty Cycle 20A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB package is ...

Page 10

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS SE MBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" OR Notes: 1. ...

Page 12

D Pak Tape & Reel Infomation TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  ...

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