IRF7706TRPBF International Rectifier, IRF7706TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7706TRPBF
• Description: MOSFET P-CH 30V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7706TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1.51W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 10V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.51 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7706
4
3200
2800
2400
2000
1600
1200
100
800
400
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.2
1
Drain-to-Source Voltage
T = 150 C
-V
J
-V
SD
DS
Forward Voltage
0.5
C
C
C
,Source-to-Drain Voltage (V)
V
C
C
C
iss
oss
rss
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.8
+ C
+ C
10
f = 1MHz
T = 25 C
gd ,
gd
J
C
ds
°
1.1
V
SHORTED
GS
= 0 V
1.4
100
16
14
12
10
100
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0
0.1
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
-7.0A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
10
Q , Total Gate Charge (nC)
DS
°
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
V
www.irf.com
40
10
DS
DS
=-24V
=-15V
50
100us
1ms
10ms
100
60