IRFR4620PBF International Rectifier, IRFR4620PBF Datasheet - Page 5

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IRFR4620PBF

Manufacturer Part Number
IRFR4620PBF
Description
MOSFET N-CH 200V 24A D-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR4620PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
78 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 100µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 50V
Power - Max
144W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
24 A
Power Dissipation
144 W
Mounting Style
SMD/SMT
Gate Charge Qg
25 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR4620PBF
Manufacturer:
EUSRCK
Quantity:
15
Part Number:
IRFR4620PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
Fig 15. Maximum Avalanche Energy vs. Temperature
120
100
80
60
40
20
0
25
0.001
100
0.01
0.1
10
0.1
1.0E-06
10
1
1E-006
1
Starting T J , Junction Temperature (°C)
50
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
TOP
BOTTOM 1.0% Duty Cycle
I D = 15A
Duty Cycle = Single Pulse
75
0.10
0.05
0.01
D = 0.50
0.02
0.01
0.20
0.10
0.05
100
1.0E-05
Single Pulse
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
t 1 , Rectangular Pulse Duration (sec)
175
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
thJC
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
τ
= Average power dissipation per single avalanche pulse.
J
av
τ
J
τ
1
) = Transient thermal resistance, see Figures 13)
Ci= τi/Ri
τ
1.0E-03
jmax
1
Ci
0.001
. This is validated for every part type.
i/Ri
R
1
R
P
1
D (ave)
τ
2
R
τ
2
2
R
= 1/2 ( 1.3·BV·I
2
I
E
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
AS (AR)
τ
= 2DT/ [1.3·BV·Z
C
τ
av
1.0E-02
Ri (°C/W)
·f
= P
0.01
0.456
0.589
D (ave)
av
) = DT/ Z
·t
th
av
]
τi (sec)
0.000311
0.003759
jmax
thJC
jmax
is not exceeded.
1.0E-01
(assumed as
0.1
5

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