STP16NF06 STMicroelectronics, STP16NF06 Datasheet - Page 3

• Manufacturer Part Number: STP16NF06
• Description: MOSFET N-CH 60V 16A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP16NF06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2766-5

STP16NF06 - STP16NF06FP
1
Electrical ratings
Table 1.
1.
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 2.
Rthj-case
Rthj-amb
Symbol
dv/dt
E
Current limited by package’s thermal resistance
SD
I
V
DM
V
V
T
P
AS
T
I
I
I
AR
T
ISO
GS
≤ 16A, di/dt ≤ 200A/µs, V
DS
stg
D
D
J
tot
j
(2)
(4)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Avalanche current, repetitive or not-
repetitive
Insulation withstand voltage (DC)
Storage temperature
Max. operating junction temperature
D
= 8A, V
DD
DD
≤ V
Parameter
(BR)DSS
= 30V
C
= 25°C
GS
, Tj ≤ T
= 0)
JMAX
C
C
= 25°C
= 100°C
TO-220
0.3
16
11
64
45
--
-55 to 175
TO-220
3.33
Value
± 20
130
60
20
16
TO-220FP
62.5
300
7.5
2500
11
44
0.17
25
(1)
(1)
Electrical ratings
(1)
TO-220FP
6
W/°C
V/ns
Unit
mJ
°C
W
V
V
A
A
A
A
V
°C/W
°C/W
°C
3/14