IRFU9024NPBF International Rectifier, IRFU9024NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFU9024NPBF
• Description: MOSFET P-CH 55V 11A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU9024NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Channel Type: P
• Current, Drain: -11 A
• Gate Charge, Total: 19 nC
• Package Type: I-Pak (TO-251AA)
• Polarization: P-Channel
• Power Dissipation: 38 W
• Resistance, Drain To Source On: 0.175 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 2.5 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 11 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU9024NPBF

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